Y. P. Zhang, J. L. Yi, Z. Y. Luo, C. L. Dong, X. X. Wang


This paper focus on the bonding between the diamond heat sink and copper stent in the LED package in which high thermal conductivity is needed. AlNi nano/micro-multilayers were fabricated and evaluated to satisfy the need to bonding copper and diamond by self-propagation for the first time. The thermal analysis results and micro structure observation showed that the bilayer (one alternative sputtering period of aluminium and nickel layers) of the mulilayers could influence the heat releasing rate of propagation reaction and help control the bonding process with steady. The influence of the Vanadium addition and the magneto-conductivity of Nickel element on the structures of the multilyers were also discussed, which has relation with the bilayer either. The quality of the diamond-copper joint by nano-multilayer bonding is better than that of the silver glue bonding in shearing strength and thermal conductivity

Ключевые слова

Micro/Nano-multilayers; Al-Ni; self- propagation joining; diamond; intermetallic.

Полный текст:



Zhao Qi, Dai Mingjiang, Wei Chunbei, Qiu Wanqi. Hot Working Technology[J], 2013,14: 97(in Chinese).

Edward L.Dreizin. Progress in Energy and Combustion Science [J], 2009, 35: 141.

Lin Tiesong, Gao Lijiao, He Peng, Gu Xiaolong, Huang Yudong, Materials Review[J], 2011, 21: 60 (in Chinese).

Okamoto H. Journal of phase equilibria [J], 1993, 3:14.

Edelstein A S, Everett R K., Richardson G Y, Qadri S B, Altman E I, Foley J C, et al. Journal of Applied Physics[J], 1994, 76(12): 7850.

Guen K Le, Gamblin G, Jonnard P, Salou M, Youssef J Ben, Rioual S, Rouvellou B. The European Physical Journal Apply Physics[J], 2009, 45: 20502.

Zalar A, Jagielski J, Mozetic M, Pracek B, Panjan P. Journal of Apply Physics[J], 2001, 61(2): 291.

Zhang Yupeng, Yang Yongqiang, Yi Jianglong, Hu Haichun Materials Transactions[J], 2013, 54(6): 931.

Kim H Y, Chung D S and Hong S H. Scripta Materialia[J], 2006, 54: 1715.

Duckham A, Spey S J, Wang J, Reiss M E et.al. Journal of Apply Physics[J], 2004, 96: 2336.


  • На текущий момент ссылки отсутствуют.

ул. Кирилловская, 19-21, Киев, 04080, Украина Тел./факс: +3 8 (044) 455-93-92 Е-mail: iiii@ukrniat.com, ukrniat@ukrniat.com 
  • Новый выпуск журнала Технологические системы № 1 2018
  • Размещение журнала в IndexCopernicus
  • Рабочие встречи ГП АНТОНОВ и Азербайджанской стороны


Некоммерческое использование материалов сайта technological-systems.com.ua (в том числе цитирование и сокращенное изложение) разрешается при условии размещения прямой ссылки на цитируемый материал или на главную страницу technological-systems.com.ua. Любое коммерческое использование, а также перепечатка материалов возможны только с письменного разрешения редакции.